Fabrication and Characterization of GaN-based Photodetectors and Heterostructure Field Effect Transistors with Low Leakage Current
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === The main goal of this dissertation is the fabrication and analyses of GaN-based ultraviolet (UV) photodetectors (PDs) and metal-semiconductor heterostructure field effect transistors (MES-HFETs). First, we use Ir/Pt alloy with high work function as the S...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02668558418318315275 |