Study of Surfactant-Like Sb in Heterojunction Field Effect Transistor
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === We suggest two ways to improve thermal stability in this study. First, a high electron-mobility transistor (HEMT) by using a dilute antimony InGaAsN(Sb) channel has been successfully investigated. The advantages by incorporating the surfactant-like Sb atoms...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/96726245092457007931 |