AlGaN-Based Photodetectors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === In this thesis, LT-GaN layer with different thickness (i.e. 15, 30 and 60 nm) were first deposited on top of AlGaN/GaN heterostructure. AlGaN/GaN Schottky barrier photodetectors with these LT-GaN cap layers were then fabricated. It was found that the reverse...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/16933157738923975890 |