Fabrication and Investigation of Nitride-based Metal-Semiconductor-Metal Photodetectors by Using Capping Layer or Recessed Electrodes
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === The objective of this research is to design the appropriate device structure for nitride-based metal-semiconductor-metal (MSM) photodetectors to improve the device performances, including the suppression of the dark leakage current or the enhancement of spee...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/55547636348864996333 |