| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === Nanocrystalline silicon (nc-Si) film has higher mobility than amorphous silicon film to elevate the current driving ability and can be uniformly deposited at low temperature (250℃), thus was employed to prepare thin film transistor (TFT) for large area display applications.
In this work, the hot-wire chemical vapor deposition (HWCVD) was used to prepare TFT for its feature of low temperature and high deposition rate. We analyzed the influence of deposition conditions such as film thickness, with and without a buffer layer, and thermal annealing on characteristics of the film through FESEM, AFM, XRD, FTIR, and I-V curve measurements. Besides, we successfully fabricate the high performance nc-Si TFTs with various structure such as different gate oxide thicknesses, with and without a buffer layer, various layer number for the layer-by-layer process, and different n+ layer structures. The best performance of the developed nc-Si TFT are 6.3×10-11 (A) for leakage current, 2.5×10-5 (A) for device driving on current, ~106 for on/off current ratio , and 18.58 (cm2/Vs) for drift mobility.
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