A Study of Phosphorus Diffusion into Ruthenium as A Copper Diffusion Barrier

碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === Recently, as the device scaling down, in order to meet the Moore’s law, the study of Copper Diffusion Barrier material was widely investigated. The traditional Al process was replaced to Cu dual damascene process to solve RC delay issues. Unfortunately, even...

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Bibliographic Details
Main Authors: Kuo-chung Hsu, 許國忠
Other Authors: Dung-ching Perng
Format: Others
Language:en_US
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/15850519889256842757