Increasing light emitting efficiency of LED by roughing p-GaN with bias-assisted PEC method
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === The research in this paper is made up by two parts. The first part is to etch p-type GaN. It is known that we can use Photoelectrochemical (PEC) etching method to etch or oxidize n-type GaN. Due to the high work function of p-type GaN, it is hard to etch or...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15366828726694841053 |