Comparison of Optoelectronic Characteristics of GaN-Based P-I-N Photodiodes with Low-Temperature-Grown GaN/AlN interlayer(s)
碩士 === 國立成功大學 === 光電科學與工程研究所 === 95 === We aims at fabricating and characterizing of GaN-based p-i-n ultraviolet photodetectors in the thesis. We have designed two variations, including p-i-n structure with low-temperature (LT)-GaN and LT-AlN interlayer(s) at middle of the absorption layer. In th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53938704751486489455 |