Nonpolar A-plane GaN on R-plane sapphire by metalorganic chemical vapor deposition
碩士 === 國立成功大學 === 光電科學與工程研究所 === 95 === This experiment aims at the research of using MOCVD grow non-polar A plane Gallium-Nitride(GaN) on R-plane sapphire(Al2O3) substrate .We use high growth temperature Aluminum-Nitride(HT-AlN) as buffer layer , and grow un-doping GaN layer about 3um base on HT-Al...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31745136736036854196 |