Investigation of Electrical Properties of Photoelectrochemical Oxide Film Formation on AlGaN/GaN MOS-HFETs
碩士 === 國立成功大學 === 光電科學與工程研究所 === 95 === Gallium nitride based semiconductors have been extensively used in high-temperature and high-power electronic devices and optoelectronic devices. With regard to the GaN amplifiers have been reported[1]. In conventional GaN MOSFETs, the gate oxide is externally...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51744522807961941446 |