The study of GaN-based schottky barrier photodetector with wet oxidation AlN layer
碩士 === 國立成功大學 === 光電科學與工程研究所 === 95 === This thesis focuses on the AlGaN/GaN series with different cap layers to fabricate Schottky diode photodetectors. In the text, we selected indium-tin-oxide film as Schottky contact to be evaporated on the structure. After measurement, Schottky barrier height、d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85135718162652832667 |