The Weibull Distribution of Thin Gate Oxide Subjected to Nano-scaled Electrical Stress
碩士 === 國立暨南國際大學 === 電機工程學系 === 95 === In this thesis, we used conductive atomic force microscopy (C-AFM) in conjunction with semiconductor parameter analyzer (HP4156C) to study the degradation and breakdown behavior of thin gate oxide under nano-scaled stress with different oxide thickness at variou...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43131426663187013412 |