Enhancement of the Performance of AlGaInP & GaN Light-Emitting Diodes
碩士 === 國立交通大學 === 材料科學與工程系所 === 95 === In this thesis, the AlGaInP epi layer was transferred successfully from GaAs to SiC substrate by wafer bonding technology at first. Then the light-extraction efficiency was also increased by surface roughening and new metal reflector. The results of the experi...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50041851710649486160 |