A Study of Device Simulation and Electrical Properties for High Power Device-CoolMOS
碩士 === 國立交通大學 === 電子工程系所 === 95 === This study simulates and discusses the superjunction MOSFET power devices (CoolMOSTM) by means of ISE-TCAD simulator, which contains processing simulation, device simulation, and circuit integrated simulation. Saturation and Quasi-saturation occurring in the CoolM...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10208288289721082675 |