| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 95 === This study simulates and discusses the superjunction MOSFET power devices (CoolMOSTM) by means of ISE-TCAD simulator, which contains processing simulation, device simulation, and circuit integrated simulation. Saturation and Quasi-saturation occurring in the CoolMOS are also explanted by 2D physical parameters. At the same time, the doping concentration balance and imbalance in the pillar region affecting the electric characteristic and physic mechanism of the superjunction power devices are also be simulated and discussed.
In this paper, we can observe that the doping concentration has large influence on the device electric characteristics and CoolMOS operating phenomenon. For example, the saturation occurs in the low drain voltage and gate voltage, and the quasi-saturation is in the high gate voltage and drain current level.
|
|---|
