The Effect of Post-Deposition Plasma Treatment on The Electrical Characteristics of HfO2 MOS Structure
碩士 === 國立交通大學 === 電子工程系所 === 95 === When the MOSFET gate insulator is scaled below 1.5 nm, some serious problems such as direct electric tunneling will occur. Therefore, high dielectric constant material is very desirable to replace SiO2. Hafnium oxide is a most promising material for future MOSFET...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42773389968240674004 |