A study on the Metal Gate Materials and Technology for the CMOS Application
博士 === 國立交通大學 === 電子工程系所 === 95 === As the evolution of the CMOS technology beyond the 45 nm technology node, poly-silicon gate encounters several inherent limitations – poly-Si depletion, boron penetration, and high resistivity. It becomes urgent to seek replacements for the poly-silicon gate. Meta...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32453138594163038862 |