Performance Dissection of Uniaxial Strained MOSFETs for Digital/Analog Applications
碩士 === 國立交通大學 === 電子工程系所 === 95 === This thesis investigates the impact of process-induced uniaxial strain on MOS-FET performance by comparing the co-processed unstrained and strained devices. The extracted intrinsic Id,sat enhancement is smaller than the Id,lin enhancement due to ve-locity saturati...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2006
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Online Access: | http://ndltd.ncl.edu.tw/handle/50284651705575667509 |