Performance Dissection of Uniaxial Strained MOSFETs for Digital/Analog Applications

碩士 === 國立交通大學 === 電子工程系所 === 95 === This thesis investigates the impact of process-induced uniaxial strain on MOS-FET performance by comparing the co-processed unstrained and strained devices. The extracted intrinsic Id,sat enhancement is smaller than the Id,lin enhancement due to ve-locity saturati...

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Bibliographic Details
Main Authors: Jyun-Yan Kuo, 郭俊延
Other Authors: Pin Su
Format: Others
Language:en_US
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/50284651705575667509

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