Study on Electrical Characteristics of High-k Metal-Insulator-Metal Capacitors
碩士 === 國立交通大學 === 電子工程系所 === 95 === With the scale-down of device size, the gate thickness has to decrease to maintain the capacitance value and drive current levels. By ITRS, we know that decreasing dielectric thickness will increase the leakage current exponentially below 1.5 nm. However, high-k m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58867039669679462757 |