Investigation of Remote Coulomb Scattering Induced Mobility Degradation in Advanced VLSI Devices
碩士 === 國立交通大學 === 電子工程系所 === 95 === Abstract. The remote Coulomb scattering (RCS) induced mobility degradation in advanced VLSI devices is investigated. Mobility degradation in HK dielectric MOSFETs is observed. By two-frequency charge pumping method, we show that the mobility degradation is caused...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46699028835799800777 |