Investigation of Remote Coulomb Scattering Induced Mobility Degradation in Advanced VLSI Devices
碩士 === 國立交通大學 === 電子工程系所 === 95 === Abstract. The remote Coulomb scattering (RCS) induced mobility degradation in advanced VLSI devices is investigated. Mobility degradation in HK dielectric MOSFETs is observed. By two-frequency charge pumping method, we show that the mobility degradation is caused...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2007
|
Online Access: | http://ndltd.ncl.edu.tw/handle/46699028835799800777 |
id |
ndltd-TW-095NCTU5428069 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-095NCTU54280692015-10-13T13:56:24Z http://ndltd.ncl.edu.tw/handle/46699028835799800777 Investigation of Remote Coulomb Scattering Induced Mobility Degradation in Advanced VLSI Devices 先進VLSI元件中遠程庫倫散射引起電子遷移率衰減之研究 Chih-Jung Wu 吳致融 碩士 國立交通大學 電子工程系所 95 Abstract. The remote Coulomb scattering (RCS) induced mobility degradation in advanced VLSI devices is investigated. Mobility degradation in HK dielectric MOSFETs is observed. By two-frequency charge pumping method, we show that the mobility degradation is caused from the HK bulk traps. An analytical equation for RCS mobility is calculated to simulate the RCS effect. By using SONOS FN programming, we confirm that the mobility will by reduced by RCS. Our result shows that mobility will be severely limited by RCS as interfacial oxide thickness (IOT) scaling. Try to know that how RCS effect affects random telegraph signal (RTS) noise, the RTS noise is characterized in SONOS flash memories. By controlling program window, the RTS noise at different program window is observed in SONOS flash memories. The amplitude of RTS at larger program window is smaller. The detailed model is still puzzling and needed more investigation. Tahui Wang 汪大暉 2007 學位論文 ; thesis 45 en_US |
collection |
NDLTD |
language |
en_US |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 國立交通大學 === 電子工程系所 === 95 === Abstract.
The remote Coulomb scattering (RCS) induced mobility degradation in advanced VLSI devices is investigated. Mobility degradation in HK dielectric MOSFETs is observed. By two-frequency charge pumping method, we show that the mobility degradation is caused from the HK bulk traps. An analytical equation for RCS mobility is calculated to simulate the RCS effect. By using SONOS FN programming, we confirm that the mobility will by reduced by RCS. Our result shows that mobility will be severely limited by RCS as interfacial oxide thickness (IOT) scaling.
Try to know that how RCS effect affects random telegraph signal (RTS) noise, the RTS noise is characterized in SONOS flash memories. By controlling program window, the RTS noise at different program window is observed in SONOS flash memories. The amplitude of RTS at larger program window is smaller. The detailed model is still puzzling and needed more investigation.
|
author2 |
Tahui Wang |
author_facet |
Tahui Wang Chih-Jung Wu 吳致融 |
author |
Chih-Jung Wu 吳致融 |
spellingShingle |
Chih-Jung Wu 吳致融 Investigation of Remote Coulomb Scattering Induced Mobility Degradation in Advanced VLSI Devices |
author_sort |
Chih-Jung Wu |
title |
Investigation of Remote Coulomb Scattering Induced Mobility Degradation in Advanced VLSI Devices |
title_short |
Investigation of Remote Coulomb Scattering Induced Mobility Degradation in Advanced VLSI Devices |
title_full |
Investigation of Remote Coulomb Scattering Induced Mobility Degradation in Advanced VLSI Devices |
title_fullStr |
Investigation of Remote Coulomb Scattering Induced Mobility Degradation in Advanced VLSI Devices |
title_full_unstemmed |
Investigation of Remote Coulomb Scattering Induced Mobility Degradation in Advanced VLSI Devices |
title_sort |
investigation of remote coulomb scattering induced mobility degradation in advanced vlsi devices |
publishDate |
2007 |
url |
http://ndltd.ncl.edu.tw/handle/46699028835799800777 |
work_keys_str_mv |
AT chihjungwu investigationofremotecoulombscatteringinducedmobilitydegradationinadvancedvlsidevices AT wúzhìróng investigationofremotecoulombscatteringinducedmobilitydegradationinadvancedvlsidevices AT chihjungwu xiānjìnvlsiyuánjiànzhōngyuǎnchéngkùlúnsànshèyǐnqǐdiànziqiānyílǜshuāijiǎnzhīyánjiū AT wúzhìróng xiānjìnvlsiyuánjiànzhōngyuǎnchéngkùlúnsànshèyǐnqǐdiànziqiānyílǜshuāijiǎnzhīyánjiū |
_version_ |
1717746198370058240 |