Characteristics and Investigation of Nano Flash Memory
碩士 === 國立交通大學 === 電子工程系所 === 95 === In a conventional nonvolatile memory, charge is stored in a polysilicon floating gate (FG) surrounded by dielectrics. The scaling limitation stems from the requirement of very thin tunnel oxide layer. For FG, once the tunnel oxide develops a leakage path under rep...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42215217432974656271 |