Monte Carlo Analysis of Secondary Hot Electrons Induced Program Disturb in SONOS Memory Array
碩士 === 國立交通大學 === 電子工程系所 === 95 === This thesis is focused on a new program disturb in a two-bit storage buried diffusion bit-line SONOS flash memory. In a NOR-type SONOS flash memory, channel hot electron program and band-to-band hot hole erase are usually employed. In channel hot electron program...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27412836717004962712 |