Bistable Resistive Switching Properties of Sputtered Deposited ZrO2-Based Memory Devices

碩士 === 國立交通大學 === 電子工程系所 === 95 === Recently, many kinds of new nonvolatile memory manufactured from different materials have attracted large attention. The resistance random access memory (RRAM) which has bistable resistive switching character started to attract the research community’s interest ag...

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Bibliographic Details
Main Authors: Chung-Yi Wu, 吳重毅
Other Authors: Tseung-Yuen Tseng
Format: Others
Language:en_US
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/24530801224756601981