Memory Effect in Sputtered Aluminum Oxide Thin Films

碩士 === 國立交通大學 === 電子工程系所 === 95 === In this thesis, next-generation nonvolatile memory will be introduced and from those we focus on resistance random access memory (RRAM) research. The RRAM has bistable resistive switching characteristic which can exhibit two states of different resistance for logi...

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Bibliographic Details
Main Authors: Chen-Yu Wu, 吳鎮宇
Other Authors: Tseung-Yuen Tseng
Format: Others
Language:en_US
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/99994196806794273184