Impacts of a Buffer Layer and Hi-wafers on the Performance of Strained-channel NMOSFETs with SiN Capping Layer
碩士 === 國立交通大學 === 電子工程系所 === 95 === In this thesis, the effects of both the Si3N4 layer capping over the gate and the hydrogen-blocked TEOS buffer layer inserted prior to the Si3N4 deposition, on the NMOS device characteristics as well as the correlative hot-electron degradation were investigated. T...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73745391359072300590 |