Effect of Fluorine Incorporation on the Reliability Issue of pMOSFETs with HfO2/SiON Gate Stack
碩士 === 國立交通大學 === 電子工程系所 === 95 === According scaling rule, ultra-thin oxide(about 1~1.5nm) will undergo tunneling effect and then cause gate leakage current , which is the issue of the reliability . Recently , high dielectric constant materials are used to replace SiO2 has widely studied. Compare w...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33911044379405745766 |