Study on Novel Oxynitride Layer Applied to Flash Memory using HfO2 as Charge Trapping Layer
碩士 === 國立交通大學 === 電子工程系所 === 95 === This study focuses on how to improve the reliabilities of Flash memory, including the data retention and device endurance. The tunnel oxide of conventional Flash memory is dry SiO2 layer. When the thickness of tunnel oxide layer is thinner than 7nm, the defects of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83651858775899776267 |