Design and Fabrication of AlGaN/GaN Heterostructure Field Effect Transistors
碩士 === 國立交通大學 === 電子工程系所 === 95 === In this thesis, the AlGaN/GaN heterostructure field effect transistors were investigated to achieve high breakdown voltage. Three types of geometry layout: line, ring and square gates, were designed and analyzed. The field-plate design was also used in the three k...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37899123209476097350 |