The Channel Backscattering Characteristics of Nanoscale Strained-CMOS and Its Correlation to the Reliability
碩士 === 國立交通大學 === 電子工程系所 === 95 === In more recent years, strained-Si device has been evolved as a potential candidate for high speed and low power logic CMOS technologies as a result of the mobility enhancement in devices. Also, there will be different performance using strained-Si on different ori...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18066116095434251149 |