Impact of Fluorine and Nitrogen Implantation on LTPS TFTs with Metal Gate and High-k Dielectric
碩士 === 國立交通大學 === 電子物理系所 === 95 === In this thesis, fluorine and nitrogen ions with different dosage and energy were implanted into polycrystalline silicon of thin film transistor with the gate-last process in all low temperature process < 600oC. After deposition of HfO2 high-k gate dielectric an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43412266591151278307 |