Improved Performance and Reliability of Local Strain Channel HfO2 nMOSFETs
碩士 === 國立交通大學 === 電子物理系所 === 95 === In this work, a high-performance local strain channel nMOSFETT with HfO2 gate dielectrics has been fabricated by using poly-Si/α-Si stacks and capping nitride layer. The driving current (ION) and transconductance (GM) can be increased about 90% and 70% for the 0.3...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53625586899267944556 |