Improvement of InGaN/GaN MQW LEDs grown by Low Pressure Organic-metal Vapor Phase Epitaxy
博士 === 國立交通大學 === 電子物理系所 === 95 === Due to the lack of native substrates for InGaN/GaN materials epitaxy growth, the densities of threading dislocation are as high as 108-1010 cm-2. The other challenge of GaN devices is the high holes concentration of p type GaN are very difficult to made, because t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40290599797169526759 |