The Development of Heat-Generable Mold insert with Sub-micron-Structure and It’s Application to Hot-Embossing

• Main Authors: Chen-Chia Wu, 吳振家
• Other Authors: Ren-Haw Chen
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/98313415805701116872

碩士 === 國立交通大學 === 機械工程系所 === 95 === The minimization of structure and large-area molding are important trends of hot embossing. Minimization brings products more functions and large-area molding makes much economical benefit. However, normal optical lithography process makes the structure at best achieve micron size and traditional hot embossing can only make limited area molding. In this research, we use E-beam lithography technology to make the line width of silicon-base mold insert structure reach to sub-micron size and then use plasma to etch the depth of structure. Moreover, we implant phosphorous ion into the mold insert to manufacture the circuit which can be charged an electric current to heat the mold insert. Finally, we can decrease the thermal stress, improve the integrity of the structure and make larger area molding during the demolding step by melting the material again which is beginning to solidify. Experiment results demonstrate that sub-micron structure will fracture seriously while demolding in normal hot embossing situation. Applying heat power to the mold insert by charging electric current indeed improves the integrity of the structure. Furthermore, we can improve other demolding defects like slant gradually by applying much appropriate heat power and operating period. Finally, we mold sub-micron structure successfully.