| Summary: | 碩士 === 國立交通大學 === 機械工程系所 === 95 === With quick technology development, electronic products require the size minimization and multi-purpose usage. So far as the Ⅲ-Ⅴ group GaN HEMT flip chip package is concerned, the finite volume and finite element methods are applied to the thermal analysis. To improve the reliability, it is necessary to include the bilinear plastic feature of the material. The thermal dissipation, stress and strain are discussed with varying the structural design and the location of bump.
The results show that the increase of the structure and the bump volume benefit on the thermal dissipation. On the situation without affecting the signal transmission, the closer the bump approaches the heat source the better the effect is. When the bump volume increases, there are bigger stress and strain on the structure.
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