Study on Process Effects and Bias Temperature Instability of Poly-Si Thin-Film Transistors
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 95 === In this thesis, first, we used a post-anneal procedure with oxygen ambient after the deposition of gate oxide. Poly-Si TFTs with such a post-anneal procedure have enhanced electrical characteristics and much improved reliability. In addition, we deposited...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77899205124137858238 |