The study of the side-channel current effect of wide channel width and the fabrications of the novel Poly-Si thin-film transistor structure
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 95 === In this paper, it is first time to discuss the ON-state drain current of a special TFT structure with a wider channel width and a narrower source/drain width in the linear region. We found that, when the channel width is wider than that of the source...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84967814563077219543 |