The study of the side-channel current effect of wide channel width and the fabrications of the novel Poly-Si thin-film transistor structure

• Main Author: 趙育晟
• Other Authors: 張國明
• Format: Others
• Language: en_US
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/84967814563077219543

碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 95 === In this paper, it is first time to discuss the ON-state drain current of a special TFT structure with a wider channel width and a narrower source/drain width in the linear region. We found that, when the channel width is wider than that of the source/drain, the side channel current effect (SCCE) would be generated, and this effect would cause the increase of the ON-state drain current due to the additional current flow paths existed in the side channel regions and lower channel resistance. As the side channel width increasing, the ON-state drain current would be initially increased and then gradually independent of the side channel width when the side channel width is larger than the effective side channel. The maximum ON-state drain current will apply to channel length and source/drain width. We also found that the ON-state drain current gain would be directly proportional to the channel length and the channel length to source/drain width ratio, and dependent on the side channel width.