Performance and Reliability Evaluation of a Low Voltage and High Speed P-channel Floating Gate Flash Memory

碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 95 === Recently, the flash memory has become the main stream of nonvolatile semiconductor memory products. High performance and reliability are two major issues for the design and manufacturing. The goal of research and development of flash memory cells is to lo...

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Bibliographic Details
Main Authors: Yao-Hsien Huang, 黃耀賢
Other Authors: Steve S. Chung
Format: Others
Language:en_US
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/76186610002771102861