Study on Reliability of Crystallized Laterally Grown Polycrystalline Silicon Thin Film Transistors
碩士 === 國立交通大學 === 電機學院光電顯示科技產業專班 === 95 === On study the grain boundary (GB) effects, the comparison of electrical stability between GB and NGB TFT has been demonstrated. The NGB TFT owns superior conducting ability than the GB TFT which contains a 100-nm trap-numerous region at the middle of the ch...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07397693000874809724 |