Optimized ESD Protection Schottky Diode for GaAs pHEMT RF SPST Switch Application
碩士 === 國立中央大學 === 電機工程研究所 === 95 === This thesis is about that proceeding with the research for the ESD protection ability to the Schottky diode layout parameter of GaAs. According to the result of ESD test, we can find that the gate periphery of the diode and HBM voltage can be direct proportion. W...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67207290589127645701 |