AlGaN/GaN HEMT Applied to Switching DC to DC Boost Converter Analysis

碩士 === 國立中央大學 === 電機工程研究所 === 95 === In recent years, energy problem has been taken seriously day by day. Therefore, the power semiconductor device is showing increasing important in power electronics. To break through the material limits of silicon to realize the drastic performance improvement, Ga...

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Bibliographic Details
Main Authors: Wei-Feng Hsu, 徐偉峰
Other Authors: 詹益仁
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/86718975893905652914