GaN/ZnO collector-up Heterojunction Bipolar Transistors
碩士 === 國立中央大學 === 電機工程研究所 === 95 === Several problems related with GaN-based bipolar transistors result in difficulties to fabricate GaN-based HBTs with good device characteristics. The major problems are the Schottky-like Ohmic contacts on p-GaN and the leakage paths from the threading dislocations...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24445140179971722879 |