InGaN Ultraviolet Light-Emitting Diodes Grown on Patterned Sapphire Substrates
碩士 === 國立中央大學 === 電機工程研究所 === 95 === Near ultraviolet GaN/InGaN multi-quantum-well light-emitting diodes (LEDs) have been grown on stripe-patterned sapphire substrates (PSSs) and investigated. The correlation between the stripe orientation, etching depth, dislocation density, and the electrical and...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36679725321973560354 |