P-I-N Solar Cell with Composition-Graded Amorphous Silicon-Alloy Layers
碩士 === 國立中央大學 === 電機工程研究所 === 95 === The p-i-n solar cells with amorphous silicon-alloy had been designed and fabricated in this study. The constant-gap i-a-SiGe:H layer and the composition-graded-gap i-a-SiGe:H layer were used as the main absorption layer respectively. The peak wavelength of the i-...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00721058931510770153 |