P-I-N Solar Cell with Composition-Graded Amorphous Silicon-Alloy Layers
碩士 === 國立中央大學 === 電機工程研究所 === 95 === The p-i-n solar cells with amorphous silicon-alloy had been designed and fabricated in this study. The constant-gap i-a-SiGe:H layer and the composition-graded-gap i-a-SiGe:H layer were used as the main absorption layer respectively. The peak wavelength of the i-...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00721058931510770153 |
| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 95 === The p-i-n solar cells with amorphous silicon-alloy had been designed and fabricated in this study. The constant-gap i-a-SiGe:H layer and the composition-graded-gap i-a-SiGe:H layer were used as the main absorption layer respectively. The peak wavelength of the i-SiGe:H absorptance spectrum was around 600 nm which is the irradiance peak wavelength in solar spectrum, while the composition-graded i-a-SiGe:H layer had the higher absorptance for light wavelength ranging from 400 nm to 600 nm. From the experiment results, it could be seen the efficiencies of devices with composition-graded-gap and constant-gap structures were 0.94% and 1.22% respectively, but the device with composition-graded-gap structure had a higher open-circuit voltage (Voc).
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