GaAs-based transverse current injection light emitting diodes at the wavelength 1060nm
碩士 === 國立中央大學 === 電機工程研究所 === 95 === In this thesis, we compared performance of our demonstrated transverse p-n junction devices to those traditional vertical ones. The nonuniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12946275837918969632 |