GaAs-based transverse current injection light emitting diodes at the wavelength 1060nm
碩士 === 國立中央大學 === 電機工程研究所 === 95 === In this thesis, we compared performance of our demonstrated transverse p-n junction devices to those traditional vertical ones. The nonuniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs...
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| Format: | Others |
| Language: | zh-TW |
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2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12946275837918969632 |
| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 95 === In this thesis, we compared performance of our demonstrated transverse p-n junction devices to those traditional vertical ones. The nonuniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by introducing a transverse p-n junction with MQWs combining with different emission wavelengths. These devices exhibit stable, flattened, and invariant broadband optical spectrum with maximum 3-dB bandwidth of 165nm around the wavelength of 1.06μm under a large bias current operation. The bandwidths of devices are not sensitive to diffusion depth and bias currents, revealing the improvement of uniform distribution of carriers.
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