An Angstrom-Scale Surface Smooth Technology for Transferred Single-Crystal Silicon Thin Film Layers
碩士 === 國立中央大學 === 機械工程研究所 === 95 === The technique of single-crystal Si layer transfer based on using Hydrogen ion implantation has been widely applied in the fabrication of SOI materials possessing nano-scale device layer with single-crystal quality. However, after Si layer transfer process, a latt...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91646643847953386170 |